Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures
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چکیده
منابع مشابه
Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices
Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin ( 11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm 1 after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcs...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2015
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4923385